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Results: 99730

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99730 Results

Img	Part Number	Manufacturers	Desc	In Stock	Packing
	2N7000	NTE Electronics, Inc	N-Channel 60 V 200mA (Ta) Through Hole TO-92	135	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
	2N7000	Diotec Semiconductor	N-Channel 60 V 200mA (Ta) 350mW (Ta) Through Hole TO-92	135	TO-226-3, TO-92-3 (TO-226AA)
	2N3055G	onsemi	Bipolar (BJT) Transistor NPN 60 V 15 A 2.5MHz 115 W Through Hole TO-204 (TO-3)	108	TO-204AA, TO-3
	BSC093N15NS5ATMA1	Infineon Technologies	N-Channel 150 V 87A (Tc) 139W (Tc) Surface Mount PG-TDSON-8-7	4390	8-PowerTDFN
	BSC010NE2LSATMA1	Infineon Technologies	N-Channel 25 V 39A (Ta), 100A (Tc) 2.5W (Ta), 96W (Tc) Surface Mount PG-TDSON-8-7	4364	8-PowerTDFN
	BSC010NE2LSIATMA1	Infineon Technologies	N-Channel 25 V 38A (Ta), 100A (Tc) 2.5W (Ta), 96W (Tc) Surface Mount PG-TDSON-8-7	4364	8-PowerTDFN
	IRL40SC228	Infineon Technologies	N-Channel 40 V 557A (Tc) 416W (Tc) Surface Mount D2PAK (7-Lead)	100	TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
	IRL40SC209	Infineon Technologies	N-Channel 40 V 478A (Tc) 375W (Tc) Surface Mount D2PAK (7-Lead)	100	TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
	IRF540	onsemi	N-Channel 100 V 28A (Tc) 150W (Tc) Through Hole TO-220AB	100	TO-220-3
	IRF1324PBF	Infineon Technologies	N-Channel 24 V 195A (Tc) 300W (Tc) Through Hole TO-220AB	80	TO-220-3
	IRFP4368PBF	Infineon Technologies	N-Channel 75 V 195A (Tc) 520W (Tc) Through Hole TO-247AC	60	TO-247-3
	IPB80N03S4L03	Infineon Technologies	N-Channel 30 V 80A (Tc) 94W (Tc) Surface Mount PG-TO263-3-2	50	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
	IKW15N120H3FKSA1	Infineon Technologies	IGBT Trench Field Stop 1200 V 30 A 217 W Through Hole PG-TO247-3-1	2716	TO-247-3
	APT75GN60LDQ3G	Microchip Technology	IGBT Trench Field Stop 600 V 155 A 536 W Through Hole TO-264 [L]	20	TO-264-3, TO-264AA
	2N5551	Diodes Incorporated	Bipolar (BJT) Transistor NPN 160 V 200 mA 300MHz 625 mW Through Hole TO-92	1300	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
	2N5551	Fairchild Semiconductor	Bipolar (BJT) Transistor NPN 160 V 600 mA 300MHz 625 mW Through Hole TO-92 (TO-226)	1300	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
	2N5551	NTE Electronics, Inc	Bipolar (BJT) Transistor NPN 160 V 200 mA 300MHz 625 mW Through Hole TO-92	1300	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
	2N5551	Diotec Semiconductor	Bipolar (BJT) Transistor NPN 160 V 600 mA 300MHz 625 mW Through Hole TO-92	1300	TO-226-3, TO-92-3 (TO-226AA)
	2N5551	Diotec Semiconductor	Bipolar (BJT) Transistor NPN 160 V 600 mA 300MHz 625 mW Through Hole TO-92	1300	TO-226-3, TO-92-3 (TO-226AA)
	BC856BW	Diotec Semiconductor	Bipolar (BJT) Transistor PNP 65 V 100 mA 100MHz 200 mW Surface Mount SOT-323	3000	SC-70, SOT-323
	BC856BW	Yangzhou Yangjie Electronic Technology Co.,Ltd	Bipolar (BJT) Transistor PNP 65 V 100 mA 100MHz 200 mW Surface Mount SOT-323	3000	SC-70, SOT-323
	BC856BW	Yangjie Technology	Bipolar (BJT) Transistor PNP 65 V 100 mA 100MHz 200 mW Surface Mount SOT-323	3000	SC-70, SOT-323
	2SK2962(T6CANO,A,F	Toshiba Semiconductor and Storage	1A (Tj) Through Hole TO-92MOD	3000	TO-226-3, TO-92-3 Long Body
	2SK2962(T6CANO,F,M	Toshiba Semiconductor and Storage	1A (Tj) Through Hole TO-92MOD	3000	TO-226-3, TO-92-3 Long Body
	2SK2962(TE6,F,M)	Toshiba Semiconductor and Storage	1A (Tj) Through Hole TO-92MOD	3000	TO-226-3, TO-92-3 Long Body
	2SK2962,F(J	Toshiba Semiconductor and Storage	1A (Tj) Through Hole TO-92MOD	3000	TO-226-3, TO-92-3 Long Body
	2SK2962,T6F(J	Toshiba Semiconductor and Storage	1A (Tj) Through Hole TO-92MOD	3000	TO-226-3, TO-92-3 Long Body
	2SK2962,T6F(M	Toshiba Semiconductor and Storage	1A (Tj) Through Hole TO-92MOD	3000	TO-226-3, TO-92-3 Long Body
	2SK2962,T6WNLF(J	Toshiba Semiconductor and Storage	1A (Tj) Through Hole TO-92MOD	3000	TO-226-3, TO-92-3 Long Body
	2SK2962,T6WNLF(M	Toshiba Semiconductor and Storage	1A (Tj) Through Hole TO-92MOD	3000	TO-226-3, TO-92-3 Long Body
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