A Comprehensive Guide To ICE40LP8K-CM81 iCE40™ LP Field Programmable Gate Array (FPGA) IC 63 131072 7680 81-VFBGA

iCE40™ LP Field Programmable Gate Array (FPGA) IC 63 131072 7680 81-VFBGA

General Description

The iCE40 family architecture contains an array of Programmable Logic Blocks (PLB), sysCLOCK™ PLLs, Nonvolatile

Programmable Configuration Memory (NVCM) and blocks of sysMEM™ Embedded Block RAM (EBR) surrounded by

Programmable I/O (PIO). 

The logic blocks, Programmable Logic Blocks (PLB) and sysMEM EBR blocks, are arranged in a two-dimensional grid with

rows and columns. Each column has either logic blocks or EBR blocks. The PIO cells are located at the periphery of the

device, arranged in banks. The PLB contains the building blocks for logic, arithmetic, and register functions. The PIOs

utilize a flexible I/O buffer referred to as a sysIO buffer that supports operation with a variety of interface standards. The

blocks are connected with many vertical and horizontal routing channel resources. Theplace and route software tool

automatically allocates these routing resources.

In the iCE40 family, there are up to four independent sysIO banks. Note on some packages VCCIO banks are tied together.

There are different types of I/O buffers on the different banks. Refer to the details in later sections of this document.

The sysMEM EBRs are large 4 kbit, dedicated fast memory blocks. These blocks can be configured as RAM, ROM or FIFO.

The iCE40 architecture also provides up to two sysCLOCK Phase Locked Loop (PLL) blocks. The PLLs have multiply, divide,

and phase shifting capabilities that are used to manage the frequency and phase relationships of the clocks.

Every device in the family has a SPI port that supports programming and configuration of the device. The iCE40 includes

on-chip, Nonvolatile Configuration Memory (NVCM).

Features

• Flexible Logic Architecture

      Five devices with 384 to 7,680 LUT4s and 10 to 206 I/Os

• Ultra Low Power Devices

      Advanced 40 nm low power process

      As low as 21 µA standby power

      Programmable low swing differential I/Os

• Embedded and Distributed Memory

      Up to 128 kbits sysMEM™ Embedded Block RAM

• Pre-Engineered Source Synchronous I/O

      DDR registers in I/O cells

• High Current LED Drivers

      Three High Current Drivers used for three different LEDs or one RGB LED

• High Performance, Flexible I/O Buffer

      Programmable sysIO™ buffer supports wide range of interfaces:

      — LVCMOS 3.3/2.5/1.8

      — LVDS25E, subLVDS

      — Schmitt trigger inputs, to 200 mV typical hysteresis

      Programmable pull-up mode

• Flexible On-Chip Clocking

      Eight low-skew global clock resources

      Up to two analog PLLs per device

• Flexible Device Configuration

      SRAM is configured through:

      — Standard SPI Interface

      — Internal Nonvolatile Configuration Memory (NVCM)

• Broad Range of Package Options

      WLCSP, QFN, VQFP, TQFP, ucBGA, caBGA,and csBGA package options

      Small footprint package options

      — As small as 1.40 mm x 1.48 mm

      Advanced halogen-free packaging