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Parameters | |
---|---|
Mfr | GE Aerospace |
Series | SiC Power |
Package | Box |
Product Status | Active |
Technology | Silicon Carbide (SiC) |
Configuration | 2 N-Channel (Half Bridge) |
FET Feature | - |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C | 475A |
Rds On (Max) @ Id, Vgs | 4.4mOhm @ 475A, 20V |
Vgs(th) (Max) @ Id | 4.5V @ 160mA |
Gate Charge (Qg) (Max) @ Vgs | 1248nC @ 18V |
Input Capacitance (Ciss) (Max) @ Vds | 29300pF @ 600V |
Power - Max | 1250W |
Operating Temperature | -55°C ~ 150°C (Tc) |
Mounting Type | Chassis Mount |
Package / Case | Module |
Supplier Device Package | - |
Base Product Number | GE12047 |
Stock:
0
Price:
$1.00
Quantity:
Shipping Cost
$28.63
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Shipment Date
2024/12/22 AM
Delivery Date
5-10 business days
About Logistics:
?Shipping time will be determined according to the logistics time, there will be differences in the place please understand!
Sub-Total | $1.00 |
Shipping: | $28.63 |
Total | $29.63 |
Shipping method | Costs | Delivery Time | |
---|---|---|---|
SF Express | $21.08 | 6-8 business days |