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IMW65R048M1HXKSA1

Manufacturer: Infineon Technologies
Product NO: IMW65R048M1HXKSA1
Package: TO-247-3
Datasheet: PDF
Stock: 10100
Sample Price: $16.14
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Description: N-Channel 650 V 39A (Tc) 125W (Tc) Through Hole PG-TO247-3-41

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Unconfirmed payment orders may not be able to deliver the normal cancellation of the order, please communicate with the email to confirm before making the relevant payment ~ Attached email phone number The platform has the right to cancel the unconfirmed payment orders do not need to bear the responsibility of default.

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Details

Parameters
FET Feature	-
Power Dissipation (Max)	125W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO247-3-41
Package / Case	TO-247-3
Base Product Number	IMW65R048
Mfr	Infineon Technologies
Series	CoolSIC™ M1
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	39A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Max) @ Id, Vgs	64mOhm @ 20.1A, 18V
Vgs(th) (Max) @ Id	5.7V @ 6mA
Gate Charge (Qg) (Max) @ Vgs	33 nC @ 18 V
Vgs (Max)	+23V, -5V
Input Capacitance (Ciss) (Max) @ Vds	1118 pF @ 400 V

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Pricing And ODER

Stock:

Price:

$16.14

Quantity:

Final price is subject to our review.

Shipping Cost

$28.63

PostNL International Mail 11-33

?Unconfirmed payment orders may not be able to deliver the normal cancellation of the order, please communicate with the email to confirm before making the relevant payment ~ Attached email phone number The platform has the right to cancel the unconfirmed payment orders do not need to bear the responsibility of default.

Shipment Date

2025/04/05 PM

Delivery Date

5-10 business days

About Logistics：

?Shipping time will be determined according to the logistics time, there will be differences in the place please understand!