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Parameters | |
---|---|
Manufacturer | Infineon Technologies |
Series | HEXFET® |
Package | Tube |
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100 V |
Current - Continuous Drain (Id) @ 25°C | 88A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 10mOhm @ 58A, 10V |
Vgs(th) (Max) @ Id | 4V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 5150 pF @ 50 V |
FET Feature | - |
Power Dissipation (Max) | 200W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Base Product Number | IRFB4410 |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |
Standard Package | 100 |
Stock:
0
Price:
$3.1900
Quantity:
shlpping Cost
$28.63
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Shipment Date
2024/09/08 AM
Delivery Date
3-5 business days
About Logistics:
?Shipping time will be determined according to the logistics time, there will be differences in the place please understand!
Sub-Total | $3.1900 |
Shipping: | $28.63 |
Total | $31.82 |
Shipping method | Costs | Delivery Time | |
---|---|---|---|
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$21.08 | 6-8 business days |