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TK35A08N1,S4X

Manufacturer: Toshiba Semiconductor and Storage
Product NO: TK35A08N1,S4X
Package: TO-220-3 Full Pack
Datasheet: PDF
Stock: 24
Sample Price: $1.05
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Description: N-Channel 80 V 35A (Tc) 30W (Tc) Through Hole TO-220SIS

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Details

Parameters
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80 V
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	12.2mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id	4V @ 300µA
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1700 pF @ 40 V
FET Feature	-
Power Dissipation (Max)	30W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220SIS
Package / Case	TO-220-3 Full Pack
Base Product Number	TK35A08
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSVIII-H
Package	Tube
Product Status	Active
FET Type	N-Channel

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Pricing And ODER

Stock:

Price:

$1.05

Quantity:

Final price is subject to our review.

Shipping Cost

$28.63

PostNL International Mail 11-33

?Unconfirmed payment orders may not be able to deliver the normal cancellation of the order, please communicate with the email to confirm before making the relevant payment ~ Attached email phone number The platform has the right to cancel the unconfirmed payment orders do not need to bear the responsibility of default.

Shipment Date

2024/11/21 PM

Delivery Date

5-10 business days

About Logistics：

?Shipping time will be determined according to the logistics time, there will be differences in the place please understand!